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| savantic semiconductor product specification silicon pnp power transistors 2SA794 2SA794a d escription with to-126 package complement to type 2sc1567/1567a high collector-emitter voltage v c eo applications for low frequency output driver optimum for the driver stage of low frequency and 40w to 100w output amplifier pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SA794 -100 v cbo collector-base voltage 2SA794a open emitter -120 v 2SA794 -100 v ceo collector- emitter voltage 2SA794a open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current -0.5 a i cm collector current-peak -1 a p c collector power dissipation t c =25 1.2* w t j junction temperature 150 t stg storage temperature -55~+150 * without heat sink
savantic semiconductor product specification 2 silicon pnp power transistors 2SA794 2SA794a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SA794 -100 v (br)ceo collector-emitter breakdown voltage 2SA794a i c =-100a ;i b =0 -120 v v (br)ebo emitter-base breakdown voltage i e =-1a ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-500ma ;i b =-50ma -0.2 -0.4 v v besat base-emitter saturation voltage i c =-500ma ;i b =-50ma -0.85 -1.2 v h fe-1 dc current gain i c =-150ma ; v ce =-10v 90 220 h fe-2 dc current gain i c =-500ma ; v ce =-5v 50 c ob collector output capacitance i e =0 ; v cb =-10v;f=1mhz 20 pf f t transition frequency v cb =-10v;i e =50ma;f=200mhz 120 mhz h fe-1 classifications q r 90-155 130-220 savantic semiconductor product specification 3 silicon pnp power transistors 2SA794 2SA794a package outline fig.2 outline dimensions |
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